Asml Holding Nv · EURONEXT:ASML
Asml Holding Nv — Investor Day (November 2003)
35 slides from Asml Holding Nv's investor day presentation, Nov 13, 2003
Slide 1: IMEC – ASML Process Technology Platform: 157nm Lithography Status Update
IMEC – ASML Process Technology Platform 157nm Lithography Status Update Kurt Ronse Director Lithography Department IMEC, Leuven (Belgium) Veldhoven, 13 November 2003 © imec 2003 1
Slide 2: Outline
Outline Introduction 157nm lithography status update IMEC 157nm program Summary and conclusions Acknowledgements © imec 2003 2
Slide 3: Outline: Introduction
Outline Introduction n IMEC-ASML process technology platform 157nm lithography status update IMEC 157nm program Summary and conclusions Acknowledgements © imec 2003 3
Slide 4: IMEC
IMEC Established by state government Largest independent R&D center in Europe (Flanders) Budget: >145M Non-profit organization Staff: >1270 Initial budget: 62M Collaboration with >450 partners Initial Staff: ~70 © imec 2003 4
Slide 5: Organization
Organization President and CEO G. Declerck Strategic partnerships Strategic Development Unit R. De Keersmaecker J. Van helleputte Technical Support Business Development & Computer Logistics L. Deferm W. Fluit Finance Human Resources A. Vinck E. Daenen Scientific Advisor H. De Man Design Technology f
Slide 6: Mission: (Sub-)45nm Si Technology Research
(Sub-)45nm Si Technology Research 0LVVLRQ to perform focused research on n Advanced materials, process steps and modules n Novel device concepts (‘beyond classical CMOS’) For technologies at least two generations ahead of manufacturing (> “N+2”) © imec 2003 6
Slide 7: Si Technology Programs (IIAP)
Si Technology Programs (IIAP) Concept Advanced R&D on Si Technology is carried out in Industrial Affiliation Programs (IIAP) Equipment supplier ,0(& 7HFKQRORJ\ 3URJUDPV Material supplier Key IC manufacturers IMEC focus on process development on advanced equipment with advanced materials © imec 2003
Slide 8: IMEC-ASML process technology platform
IMEC-ASML process technology platform Evolution of IMEC-ASML cooperation n 1990 : first ASML 248nm stepper installed at IMEC (PAS5000/70) Industrial affiliation program on 28nm lithography Process training center for ASML application engineers n 1999 : first ASML 193nm scanner installed at IMEC (PAS
Slide 9: ISMT stop light chart: critical challenges
157nm critical challenges : ISMT stop light chart QP/LWKRJUDSK\5HSRUW&DUG Aug-03 Nov-00 Dec-00 Dec-01 Sep-02 Jun-99 Feb-01 Jun-01 Jun-02 Jan-99 Mar-99 Issues/Comments Mask - Reticle blanks Substrate More work on lifetime of attenuators PSM absorbers Masks - Pellicle Pellicle Workable Hard Pellicle S
Slide 10: Outline
Outline Introduction Status of 157nm critical issues n 157nm resist status n 157nm exposure tool status n 157nm pellicle status n 157nm mask substrate status IMEC 157nm program Summary and conclusions Acknowledgements © imec 2003 10
Slide 11: Resists: Absorbance challenge 2000-2001
157nm resists 2000-2001 : Absorbance challenge Polymer absorbance Development of new: chemistries from 6 to below 1/µm n Siloxane, silsesquioxanes 248nm chemistry : UTR n Fluoropolymers ( ) n m 6 UV6 ( ) CF3 OH n m F 3C CF 3 O CH2 O CH2 CH3 5 C O F 3C OH CF3 O F3C CF3F3C Absorbance µm-1 OH C(CH3)3 4
Slide 12: Resists: transparency allows thickness increase
157nm resists 2001-2002: resist transparancy allows thickness increase 200nm thick 67 nm thick 110nm thick silicon barc barc Absorbance 8 Absorbance [1/um] 7 6 5 4 3 2 1 0 Jan- Apr- Jul- Nov- Feb- May- Sep- Dec- Mar- Jun- 01 01 01 01 02 02 02 02 03 03 110nm thick Date silicon © imec 2003 12
Slide 13: 157nm resists: status today
157nm resists Status today 100nm 90nm 80nm 70nm 65nm 60nm State of the art resist Absorbance < 1.0 /µm < 60 nm resolution in 150nm thickness (NA=0.85, PSM) F. Houlihan et al, 4th International Symposium on 157nm lithography © imec 2003 13 Exposure : Exitech NA=0.85, Selete
Slide 14: 157nm resists: status today
157nm resists Status today Courtesy of Selete and Nissan Chemicals, 4th International Symposium on 157nm lithography © imec 2003 Exposure : Exitech NA=0.85, Selete 14
Slide 15: 157nm resists: summary
157nm resists Summary Significant resist progress n Absorbance of resist has decreased to below 1/um, allowing imaging in resist thicknesses > 150nm n Today’s best resists are capable of 60nm1:1 resolution (at 0.85NA, PSM) in 150nm thick resist Further improvements needed n Line edge roughness is a
Slide 16: Exposure tool: CaF2 improvements
157nm exposure tool CaF2 improvements 193 nm (111) 157 nm 2 material material status material for /900 for /1100 2001 1600 1,5 system 1-3 SDB rms [nm/cm] system 4 1 (100) S CHOT T (111) (100) lithotech 0,5 (111) 0 1998 2000 2001 2002 2003 © imec 2003 16
Slide 17: 157nm exposure tool
157nm exposure tool First full field scanner successfully installed at IMEC ASML MicraScanVII step&scan Platform specs: Lens reduction ratio: 4X Lens NA: variable 0.4 to 0.75 Field size: 34 mm x 20 mm Wafer size: 200 mm Reticle size: 6” x 6” x 0.25” Partial coherence range: 0.3 to 0.85 Reticle clean
Slide 18: 157nm exposure tool
157nm exposure tool First full field scanner successfully installed at IMEC 100nm 90nm 130nm 80nm Binary mask, 0.75 NA Conventional illumination S. Dana et al, 4th International Symposium on 157nm lithography Exposure : ASML MSVII NA=0.75, BIM © imec 2003 18
Slide 19: 157nm exposure tool
157nm exposure tool First full field scanner successfully installed at IMEC 70nm 1:1 L/S 60nm 1:1.25 L/S F= + 0.1 µm Best focus F= - 0.1 µm Binary mask, 0.75 NA Dipole illumination 150 nm resist thickness © imec 2003 19
Slide 20: 157nm exposure tool: summary
157nm exposure tool Summary Significant progress n First full field exposure tool installed in the field and showing acceptable performance n Intrinsic birefringence compensation successful (CaF2 <M111> and <100> crystal orientations) Further learning needed n Long term optical path stability (hydro
Slide 21: 157nm pellicle: the issue
157nm pellicle the issue Pellicle: to protect pattern from defects First option : Soft pellicle : 1 µm thick polymer : n Transparency n Radiation hardness © imec 2003 21
Slide 22: Soft pellicle
157nm pellicle Soft pellicle Transmission ratio from Initial 1.2 1 Transmittance (A.U) 0.8 0.6 0.4 0.2 0 0 5 10 15 20 Dose E (J/cm2) Data presented at Data presented at 157 nm Symposium 157nm Symposium, Dana Point CA, May, 2001 Antwerp Belgium, Sept., 2002 Soft pellicle lifetime (initial target : 20
Slide 23: 157nm pellicle: soft pellicle
157nm pellicle soft pellicle Pellicle: to protect pattern from defects First option : Soft pellicle : 1 µm thick polymer : n Transparency n Radiation hardness © imec 2003 23
Slide 24: 157nm pellicle: hard pellicle
157nm pellicle hard pellicle Pellicle: to protect pattern from defects First option : Soft pellicle : 1 µm thick polymer : n Transparency n Radiation hardness Alternative : Hard or ‘thick’ pellicle : 800µm thick quartz n Expensive n Optical element (aberrations, distortions) © imec 2003 24
Slide 25: 157nm pellicle: summary
157nm pellicle Summary Significant hard pellicle progress n All hard pellicle imaging effects are understood and can be compensated using lens manipulators Further improvements needed n Hard pellicle mounting needs to reduce local tilt n Soft pellicle polymer development will improve CoO © imec 2003
Slide 26: 157nm mask substrate: the issue
157nm mask substrate the issue Modified SiO2 Surface organic contamination reduces transmission © imec 2003 26
Slide 27: VUV cleaning can restore transmission
157nm mask substrate VUV cleaning can restore transmission Principle VUV cleaning n Expectation that the transmission loss of F-doped quartz by CR- airborne contamination is 1-2% (ref. T. Bloomstein et al., ISMT 157nm reticle handling meeting, San Diego, 2000) n 172nm light in presence of oxygen gen
Slide 28: VUV cleaning can restore transmission
157nm mask substrate VUV cleaning can restore transmission 93 2% to 3% transmission recovery 91 89 Transmission 87 85 83 81 79 77 75 150 155 160 165 170 Wavelength (nm) © imec 2003 28
Slide 29: 157nm mask substrate: summary
157nm mask substrate Summary Significant progress n VUV cleaning has been proven to restore mask substrate transmission Further improvements needed n Handling of reticles in fab, in mask shop, and in transport needs to be checked for irreversible transmission degradation on the longer term © imec 20
Slide 30: Outline
Outline Introduction Status of 157nm critical issues IMEC 157nm program n Objectives n Partners n Projects Summary and conclusions Acknowledgements © imec 2003 30
Slide 31: IMEC 157nm Lithography Program objectives
IMEC 157nm Lithography Program Program objectives in R t g te es si kin ri gra ist s c Re mar tic ti a on ch l la on n ye be rs IMEC 157nm m Op le o ing c Process t n i i t c i re t l al d o Program han r m i p ng n a t 7 h 1 5 printing Hard pell icle © imec 2003 31
Slide 32: IMEC 157nm Lithography Program partners
IMEC 157nm Lithography Program Program partners Equipment suppliers Resist suppliers ASML Arch/FujiFilm TEL Clariant KLA-Tencor JSR Int’l Sematech Lam Research TOK Brewer Nissan Chemical AMD Shin Etsu HP IBM IMEC Merch. mask shops Infineon 157nm Photronics Intel Dai Nippon Printing Motorola Process
Slide 33: Outline
Outline Introduction Status of 157nm critical issues IMEC 157nm program Summary and conclusions Acknowledgements © imec 2003 33
Slide 34: Summary and conclusions
Summary and conclusions 157nm critical challenges update n 157nm resists Steady progress (transmittance and lithographic performance) Significant further progress needed for 45nm node (LER, integration) n Exposure tool (Micrascan VII) The world’s first 157nm full field scanner operational at IMEC Lo
Slide 35: Acknowledgements
Acknowledgements Thanks for contributions from n IMEC SPDT/LITHO n ASML 157 nm development teams (Wilton, Veldhoven) n Infineon Technologies (providing the alternating PSM) n Resist vendors (Clariant, TOK, …) n ISMT (K. Turnquest, G. Feit, K. Dean) n Selete (T. Itani) Thanks for funding : n Part of