Monolithic Power Systems, Inc. · NASDAQ:MPWR
Monolithic Power Systems — Technical Presentation (May 2024)
30 slides from Monolithic Power Systems's technical presentation, May 22, 2024
Slide 1: Driving Efficiency: Ideal Diode Controllers in Automotive Systems
Wednesday May 22 Session 1 Starts: 10:00 CEST | 1 AM PDT | 4 AM EDT Session 2 Starts: 17:00 CEST | 8 AM PDT | 11 AM EDT Driving Efficiency: Ideal Diode Controllers in Automotive Systems 5/22/2024 Ralf Ohmberger, Staff Applications Engineer, MPS All attendees are muted. Live QA available via chat.
Slide 2: Agenda
Agenda Introduction What is an Ideal Diode Controller? Power and Voltage Drop of Ideal Diode Controller vs. Schottky Diode Different Diode Controllers – MPQ5850-AEC1, MPQ5852-AEC1, and MPQ5816-AEC1 Rectifier – AC-Superimposed Alternating Voltage, Reverse Polarity, Automotive Tests O-Ring – Parallel
Slide 3: Introduction
Introduction This introductory webinar will help today’s hardware engineers understand the functionality of ideal diode controllers — including how to choose their external parts and how to apply them to a design in a practical manner. This webinar will also compare applications using ideal diode co
Slide 4: What is an Ideal Diode Controller?
What is an Ideal Diode Controller? 300mV to 800mV 20mV Passive Schottky Diode Ideal Diode Controller Past Today An ideal diode regulator uses an N-channel MOSFET with a controlled 20mV voltage drop.
Slide 5: Power of Ideal Diode Controller vs. Schottky Diode
Power of Ideal Diode Controller vs. Schottky Diode Power Schottky vs. Ideal Diode Controller TJUNCTION = 75°C 4000 Diode Power MOSFET Power MPQ5850-AEC1 and MPQ5852-AEC1 3500 • With External N-Channel MOSFET 3000 • MOSFET: RDS(ON) = 6mΩ, IDRAIN MAX = 80A, BVDSS = 60V 2500 • MOSFET Package: 3.3mmx3.3
Slide 6: Voltage Drop of Ideal Diode Controller vs. Schottky Diode
Voltage Drop of Ideal Diode Controller vs. Schottky Diode Voltage Drop Schottky vs. Ideal Diode Controller TJUNCTION=75°C 600 Diode Voltage Drop MOSFET Voltage Drop MPQ5850-AEC1 and MPQ5852-AEC1 500 • With External N-Channel MOSFET • MOSFET: RDS(ON) = 6mΩ, IDRAIN MAX = 80A, BVDSS = 60V Voltage Drop
Slide 7: MPQ5850-AEC1 – Diode Controller with External MOSFET
MPQ5850-AEC1 – Diode Controller with External MOSFET Features Applications Rectifies up to 100kHz -36V to +42V Automotive System Prot. Low Dropout: 20mV Automotive ADAS Gate Boost Converter Automotive Infotainment Gate Drive: 430mA Digital Head Units Gate Sink: 170mA Battery-Powered Systems Standby:
Slide 8: MPQ5852-AEC1 – Diode Controller, External MOSFET, Monitor
MPQ5852-AEC1 – Diode Controller, External MOSFET, Monitor Features Applications EMI filter decreases MOSFET Rectifies up to 100kHz and peak currents in C5, C6. -40V to +42V Automotive System Prot. Low Dropout: 20mV Automotive ADAS Gate Boost Converter Automotive Infotainment Strong Gate Drive Digita
Slide 9: MPQ5816-AEC1 – Diode Controller, Internal MOSFET, Charge Pump
MPQ5816-AEC1 – Diode Controller, Internal MOSFET, Charge Pump Gate Charge Pump Features Applications -40V to +42V Automotive System Prot. Internal 10mΩ MOSFET rectifies up to 100kHz 3V to 42V Start-Up Automotive ADAS Standby: 1µA Gate On, 2A; Off, 0.11A Automotive Infotainment Steady State: 75µA Dig
Slide 10: Rectifier – AC-Superimposed
Rectifier – AC-Superimposed VOUT 470µF Capacitor Supplies 1A Load VIN < VOUT VIN > VOUT Gate Off Gate On 13V 13V 10.5V 6A Clear Rectifier Waveforms 8V 0A 12V Channels 0V • C1: VIN (2V/div.) • C2: VOUT (2V/div.) • C3: Input Current (2A/div.) 1kHz 1A MPQ5850 • F4: VGATE to SOURCE (5V/div.) VIN = 10.5V
Slide 11: Rectifier – AC Superimposed – with LCOUT Filter
Rectifier – AC Superimposed – with LCOUT Filter IINPUT VLCOUT 9V ICAPACITOR VLCOUT = 6VDC VGATE to SOURCE = 4VDC 3V AC- IINPUT Superimposed 20kHz ICAPACITOR = 10µF Use an inductor to reduce thermal heat 20µs/div. in the electrolytic capacitor.
Slide 12: Rectifier – AC Superimposed – with LCOUT Filter
Rectifier – AC Superimposed – with LCOUT Filter AC- VGATE_TO_SOURCE = 12V VSOURCE < VDRAIN Superimposed 10kHz VLCOUT Clear VLCOUT VSOURCE > VDRAIN C-L-C Output Filter 0V 10µF IINPUT < 0A 4.7µH ICAPACITOR = 10µF 1600µF 20µs/div. IBOOST INDUCTOR No current back into battery
Slide 13: Reverse Polarity, LV124, E-15, +12V to -14V
Reverse Polarity, LV124, E-15, +12V to -14V Reverse 12V 12V polarity 3.3V alternating VDRAIN = 0V +12V to -14V Reverse polarity VSOURCE = -14V blocked VRES to GND = 23V VGATE_TO_SOURCE = 7V Test time 8s ILOAD = 10A 10A IINPUT = 0A IBOOST INDUCTOR No current back into battery 1s/div.
Slide 14: Automotive Test – VW80000 LV124
Automotive Test – VW80000 LV124 MPS Ideal Diode Controller Designed to Pass Automotive LV124 • E-01: Long-term over-voltage • E-02: Transient over-voltage • E-03: Transient under-voltage • E-04: Jump start • E-05: Load dump • E-06: Superimposed alternating voltage • E-07: Slow decrease and increase
Slide 15: Ideal Diode Controller – O-Ring
Ideal Diode Controller – O-Ring O-Ring O-Ring Block Diagram • Parallel batteries or power supplies VSOURCE1 VDRAIN1 • Protect power supplies from reverse currents • Hot-swapping • The highest voltage supplies the load + 20mV ILOAD • Equal voltages sharing the load current VIN1 0A For VIN1 > VIN2 RLO
Slide 16: O-Ring – Removing VIN1
O-Ring – Removing VIN1 VOUT = 12V VIN2 = 12V 12V 12V 12V VIN1 = 0V Power Off VIN1 IIN2 = 2.5A IOUT = 2.5A 1.25A O-ring after 1.25A IIN1 = 0A No reverse current into VIN1 removing power supply (VIN1). POUT = 30.48W POUT = 30.30W Output power constant 4ms/div.
Slide 17: O-Ring – On/Off Offset on VSOURCE1 and VSOURCE2
O-Ring – On/Off Offset on VSOURCE1 and VSOURCE2 VOUT = 12.38V 12.4V 12.4V 12.4V 12.4V 12.4V 12.4V 10V 10V 10V Switching 10V 10V 10V On-Off-On IOUT = 506mA O-Ring power supplies with 10VDC offset voltage Constant POUT = 6.263W Output power constant 1s/div.
Slide 18: O-Ring – for Low-Voltage Sources
O-Ring – for Low-Voltage Sources 3.451V VDRAIN = 3.451V - 0.02V VDRAIN = 3.451V - 0.02V VSOURCE2 = 3.451V 2.889V VSOURCE1 = 2.889V VSOURCE1 = 2.889V VDRAIN = 2.889V - 0.02V Low Voltage Operation 0V 0V VSOURCE1: 2.889V VSOURCE2 : 3.451V V2ENABLED V1ENABLED V2DISABLED V1DISABLED ILOAD = 343mA ILOAD =
Slide 19: IC Starts after VDRAIN < UVLO
IC Starts after VDRAIN < UVLO VSOURCE2 = 2A Current Limit 3.439V VDRAIN = 3.439V - 0.02V Passive Rectification Active Rectification Turn on Active Rectification VDRAIN = VSOURCE MOSFET • Fast-off MOSFET again VDRAIN activates Power supply 2A current • Ringing on VSOURCE2, caused by parasitic IC star
Slide 20: Passive P-Channel MOSFET Rectifier vs. Ideal Diode Controller
Passive P-Channel MOSFET Rectifier vs. Ideal Diode Controller VIN VOUT 12V 12V 13V 2V/div. 2V/div. VOUT 2V/div. VIN OK 2V/div. 0V 0.5V 7V VGATE-SOURCE -4V Fast Gate 2V/div. Input Current Input Current 2A/div. 0V 0V 5A/div. P-Channel MPQ5850 Past P-Channel MOSFET Rectifier Today MPQ5850-AEC1 • Proble
Slide 21: Why Gate Booster and why Gate Charge Pump?
Why Gate Booster and why Gate Charge Pump? MPQ5850-AEC1 and MPQ5852-AEC1 with Gate Booster MPQ5816-AEC1 with Gate Charge Pump • The gate booster can drive a wide range • The design of the gate charge pump can of external N-channel MOSFETs of be specifically optimized for the internal different sizes
Slide 22: Does an Ideal Diode Controller Create EMC Problems?
Does an Ideal Diode Controller Create EMC Problems? No – Negligible • The gate booster and the charge pump have their highest activity at the transient gate load. This is the case with a power supply that is superimposed with AC. EMC tests are defined and measured under normal operating conditions.
Slide 23: Does a Diode Controller Require a Special PCB Layout?
Does a Diode Controller Require a Special PCB Layout? No – Consider a Few Points • Place the VRES MLCC for the gate booster (MPQ5850-AEC1, MPQ5852-AEC1) or the VCAP MLCC for the charge pump (MPQ5816-AEC1) as close as possible to the package. • Place the switching inductor of the gate booster as clos
Slide 24: Does a Diode Controller Require a Special PCB Layout?
Does a Diode Controller Require a Special PCB Layout? MPQ5852-AEC1 on a 4-Layer PCB • The board is designed for an IOUT = 20A. • The polygons help to cool down the MOSFETs, EMC filter inductance, and the electrolytic capacitor. • The polygon size and number of vias must be selected according to the
Slide 25: How to Select the N-Channel MOSFET?
How to Select the N-Channel MOSFET? MOSFET Selection • Use the smallest N-channel MOSFETs suitable for IDRAIN. • BVDSS = 40V to 60V for 12V automotive applications; other BVDSS values can be selected for industrial, computer, or battery management systems. • MPS’s ideal diode controllers are designe
Slide 26: Design Tips
Design Tips Circuit Details • The wire harness helps attenuate transient VIN waveforms. The parasitic inductance of the harness length, together with the 10nF VIN MLCC, creates a second order low pass that attenuates HF. • When selecting the gate booster inductor, follow the recommendations in the d
Slide 27: Measurement Tips
Measurement Tips Test Equipment Details • A multi-channel oscilloscope is recommended for measurements on diode controllers; a 100MHz bandwidth is sufficient. • When measuring VSOURCE with an oscilloscope, always measure directly at the IN or SOURCE pins, as fast transient signals will cause a volta
Slide 28: Conclusion
Conclusion • The MPQ5850-AEC1 from MPS is a solution for any N-channel MOSFET size. • The MPQ5852-AEC1 has rectifier functionality similar to the MPQ5850-AEC1 with two additional voltage monitors, fault indication, and functional safety. • The MPQ5816-AEC1 shows a solution with internal N-Channel MO
Slide 29: Let us know your questions
Let us know your questions Q&A Articles and Videos on Our Website: monolithicpower.com Technical Information about MPS Ideal Diode Controllers
Slide 30: Thank You – Q&A
Thank You – Q&A For more information, contact: [email protected] Check out our AEC-Q100 Power Management Solutions at MonolithicPower.com
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