Data I/o Corporation · NASDAQ:DAIO

Data I/o — Flash Memory Summit 2013

17 slides from Data I/o's conference presentation, 2013

  1. Slide 1: Programming Matters: MLC NAND Reliability and Best Practices for Data Retention

    Programming Matters MLC NAND Reliability and Best Practices for Data Retention Data I/O Corporation Anthony Ambrose President & CEO Flash Memory Summit 2013 Santa Clara, CA 1

  2. Slide 2: Executive Summary

    Executive Summary  As Process Geometries Shrink down to 20nm and beyond, Data Retention through SMT reflow has become a topic of discussion among semiconductor vendors, programming vendors and end users using MLC NAND FLASH memories. (SLC NAND, NOR and Serial FLASH are not affected)  Semiconductor

  3. Slide 3: What is the Problem?

    What is the Problem?  After high temperature processing, Multi-level cell NAND threshold voltages can shift beyond the reference voltage, causing read errors  The problem gets worse as process geometries shrink Ideal Vt Distribution 1.000,000 100,000 Bits 10,000 • Erase/Program cycles cause distri

  4. Slide 4: Programming Methods

    Programming Methods 1 Test SMT Line Customization Offline Programming 2 Test SMT Line ISP for Boot Code & USB Data Test Code programming & Customization 3 Program boot and test Test USB Data code inline with programming & RoadRunner @ SMT Line Customization

  5. Slide 5: Programming Considerations

    Programming Considerations  Quality of Programming • Device algorithms • Hardware performance and longevity • Silicon Performance  Total Cost • Per unit on an individual program • Flexibility for other products/programs within a factory  Support and Service  Ease of Integration into Manufacturin

  6. Slide 6: Why Not Just Program After Reflow?

    Why Not Just Program After Reflow? Preprogramming is the preferred method for a large percentage of manufacturers and changing processes presents big challenges and investment:  Offline automated benefits (Preprogramming) • Lowest cost per part – one solution can support several SMT lines • Support

  7. Slide 7: Best Practices

    Best Practices At the Programmer: Bad Block Management FlashCORE III with SuperBoost Full Block Programming Low Noise Intelligent Adapters Optional (Program MLC in SLC mode) On the Production Line: Thermal Management After Solder Reflow: Read-Retry-Mode Data Refresh • Build Product • Boot De

  8. Slide 8: Oven Temperature Management

    Oven Temperature Management Manage Thermal profiles (Time and Temperature) in accordance with memory supplier guidelines  PCB profiling tools are used to create a repeatable thermal process that meets the specifications required by the solder paste and/or component manufacturers  Only by profiling

  9. Slide 9: Bad Block Management

    Bad Block Management Target Device Image Data File DataBlock Block #1 #1 Block #1 Data DataBlock Data Block #2 #2 Block #2 Bad Block DataBlock Data Block #3 #3 DataBlock Block #4 #4 Block #3 This example just skips ahead Data to the next good block when a Block #4 bad block is encountered Bad Block

  10. Slide 10: FlashCORE III with SuperBoost Technology

    FlashCORE III with SuperBoost Technology Data I/O FlashCORE III with SuperBoost  SuperBoost is technology giving customers the ability to achieve the highest programming speeds available on the market today for eMMC devices  SuperBoost is a field-upgradeable enhancement for FlashCORE III programme

  11. Slide 11: Full Block Programming

    Full Block Programming  Program full blocks, rather than partial blocks • Reduces ‘leakage’ across cells within the same block • Programming erased blocks to higher threshold voltage levels, improves data retention for blocks which are preprogrammed with content prior to reflow Programming Solution

  12. Slide 12: Enhanced Low Noise Adapters

    Enhanced Low Noise Adapters  Semiconductor manufacturers are constantly trying to improve efficiency (die shrinkage, wafer size), and new applications require greater access speeds and higher densities  Data I/O handles the demands of new device families through new programmer platforms, new algor

  13. Slide 13: Use SLC Mode Option

    Use SLC Mode Option  Critical sections of the device can be programmed in SLC mode  Total bit capacity is reduced, but reliability and data retention is greatly improved for those designated critical sections Turn This Ref 1 Ref 2 Ref 3 11 0V 10 00 01 Into This Ref 1 High Margin 1 0

  14. Slide 14: Read Retry Mode

    Read Retry Mode NAND’s Read Retry Feature  Multi-level cell placements can shift beyond the reference voltage, causing read errors. As long as the distributions are not overlapping, the data should be recoverable  Read Retry can shift the reference until a passing read point is found  Block Refre

  15. Slide 15: Data Retention Experiment

    Data Retention Experiment  Data I/O and a leading semiconductor vendor tested devices under multiple conditions of noise and programming methods  The key success factor to programming is that the noise of system must be extremely low. This must be controlled with the programmer, adapters and algor

  16. Slide 16: Best Practices Summary

    Best Practices Summary Pre Programming Solder Reflow Read Retry Data Refresh Offline Automated Programming Data I/O Recommended Thermal Profiles End Product Best Practices  MLC guidelines  Boot  Bad Block Management  Bit Error Recovery  FlashCORE III with SuperBoost with Read-Retry  Full Block

  17. Slide 17: Want to Know More?

    Want to Know More?  Talk with a Data I/O NAND expert. We can recommend best programming practices to help maximize your MLC NAND flash data retention  Learn how Superboost technology and our algorithms, adapters and process control can maximize your production yields and reliability Contact your l

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