Taiwan Auto-design Co. · TPEX:6791

Taiwan Auto-design — Wave Front — Technical Presentation (May 2016)

40 slides from Taiwan Auto-design's technical presentation, May 18, 2016

  1. Slide 1: Application of Rarefied Flow & Plasma Simulation Software

    2016/5/18 Application of Rarefied Flow & Plasma Simulation Software Yokohama City in Japan

  2. Slide 2: Profile of Wave Front Co., Ltd.

    Profile of Wave Front Co., Ltd. Name : Wave Front Co., Ltd. Incorporation : March 1990 Head Office : Yokohama in Japan Business Description (1) CFD(Computational Fluid Dynamics)&Plasma Software, Sales & Consulting Services (2) CMMS(Computerized Maintenance Management System) Software, Sales, Consult

  3. Slide 3: Rarefied Neutral Gas Flow Simulation using Particle Method

    Rarefied Neutral Gas Flow Simulation using Particle Method

  4. Slide 4: Feature

    Feature 1. Rarefied Neutral Gas Flow Simulation Software based on Direct Simulation Monte Carlo (DSMC) method 2. Simulation of Thin Film Growth due to Chemical Reaction like CVD • Gas Phase Chemical Reaction • Surface Chemical Reaction 3. Automatic and Very Fast Mesh Generation 4. Unstructured Mesh

  5. Slide 5: DSMC method

    DSMC method Represent Particle of Neutral Species (1) Making Grid (2) Particles Moving (3) Collision between Particles Initial Particle Setup Reflection on Boundary One particle collides another in the same cell. Requirement of numerical parameters  Cell size D x < l : mean free path  Time interva

  6. Slide 6: Application examples

    Application examples CVD Reactor with Showerhead Hyper Sonic Rarefied Flow Temperature profile Temperature profile Particle Trace LP-OVPD OVPD with Carrier Gas Density profile Density profile Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 6

  7. Slide 7: 1. CVD model with Shower head

    1. CVD model with Shower head • N2 : 5 [ slm ] • SiH4 : 5 [ sccm ] Procedure of shower head model • T : 300 [K] 1. Only the shower head part is computed, where shower head gas flow rate into the chamber is obtained. 17.5 2. The gas flow including chemical reaction is 10 computed by using the gas flo

  8. Slide 8: 1. Chemical reaction of CVD model

    1. Chemical reaction of CVD model  E  Arrhenius equation k f  T  exp   a   T  Gas phase chemical reaction*1 Reaction equation [m3 / s]  Ea [ K ] SiH4  M -  SiH2  H2  M 0.865  3.54 29000 *1 J. Phys. Chem. vol.98 10138 (1994) Surface reaction*2 Surface reaction [m3 / s ]  Ea [ K ] S

  9. Slide 9: 1. Shower head part

    1. Shower head part N2 flow velocity [ m/s ] SiH4 flow velocity [ m/s ]  Both flow velocity profiles is almost the same because pressure is sufficiently high.  Gas flow rates of each shower head nozzle is obtained. The gas flow in the chamber using them. Copyright © 2016 Wave Front Co., Ltd. All R

  10. Slide 10: 1. Number density

    1. Number density [1018 #/m3] N2 SiH4 SiH2 H2 Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 10

  11. Slide 11: 1. Temperature and depo. rate

    1. Temperature and depo. rate Temperature [ K ] Deposition rate profile [ Å/s ]  Temperature jump is reproduce on substrate.  The temperature dependence of deposition rate appears on the substrate. Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 11

  12. Slide 12: 2. Hyper Sonic Rarefied Flow

    2. Hyper Sonic Rarefied Flow outflow （perfect vacuum） 3058 inflow 1060.8 2500 47.7° 1700 15° Rn=1350 40° 1500 1508 500 mm OREX （accommodation factor：1） altitude [km] flow vel. [m/s] density [m-3] mole frac. （O2） mole frac. （N2） mole frac. （O） 105.0 7451.0 5.0515E+18 0.1528 0.7815 0.0657 92.8 7454.1

  13. Slide 13: 2. Chemical reaction

    2. Chemical reaction Gas phase chemical reaction is computed using TCE model. The molecules used in the computation consider vibrational and rotational energy. Reaction equation A [cm3/mol s] B Ea [K] N2 + M <-> N + N + M 7.0x1021 -1.6 113200 O2 + M <-> O + O + M 2.0x1021 -1.5 59500 NO + M <-> N + O

  14. Slide 14: 2. Results (altitude:105 km)

    2. Results (altitude:105 km) with reaction without reaction Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 14

  15. Slide 15: 2. Heat flux [kW/m2]

    2. Heat flux [kW/m2] 98.2 * DSMC SIMULATION OF OREX ENTRY CONDITIONS : James N. Moss, Roop N. Gupta, Joseph M. Price (Aerothermodynamics Branch, NASA Langley Research Center, Hampton, Virginia 23681-0001, USA) Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 15

  16. Slide 16: 2. Heating rate coefficient

    2. Heating rate coefficient CH mass density in 105 atmospheric pressure 98.2 q ： heat flux Ms ： atomic mass ns ： No. density NA ： Avogadro constant V ： OREX’s velocity Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 16

  17. Slide 17: Low Pressure Plasma Simulation using Particle Method

    Low Pressure Plasma Simulation using Particle Method

  18. Slide 18: Feature of Particle-PLUS

    Feature of Particle-PLUS 1. Plasma Simulation Software Package for Law Pressure 2. Composition of Main Two Modules, Plasma Module : based on Particle-in-Cell (PIC) method Neutral Module : based on DSMC method 3. Simulation of Thin Film Growth due to Magnetron Sputtering • Background Gas Flow : Neutr

  19. Slide 19: Particle in cell method

    Particle in cell method Represent Particle of Charged Species f q (1) Making Grid (2) Charge Allocation on Node (3) Electric Potential Initial Particle Setup & Field Solved on Node E (6) Collision Reactions (5) Particle Moving (4) Electric Field Interpolation Particle collides background Reflection

  20. Slide 20: Mesh size dependence

    Mesh size dependence 30 mm 10 mm 30 mm 10 mm dielectric dielectric The number of cells The number of cells 20 mm 20 mm Ar gas 30 mTorr 3608 cells Ar gas 30 mTorr 902 cells Computation time Computation time dielectric 8.1 days dielectric 3.5 days (two processors) (two processors) C=1.0E-10 F C=1.0E-1

  21. Slide 21: Mesh size dependence

    Mesh size dependence electron density [#/m3] electric potential [V] 0.5 mm, Cycle660 Max=2.4x1016 0.5 mm, Cycle660 Max= 143 Min =-156 ave_density_ele ave_electric_potential 1 mm, Cycle660 Max=2.6x1016 1 mm, Cycle660 Max= 137 Min =-170 2 mm, Cycle 650 Max=2.4x1017 2 mm, Cycle 650 Max= 128 Min =-197 C

  22. Slide 22: Weight of particles dependence

    Weight of particles dependence electron density [#/m3] electric potential [V] small Max=2.5x1016 small Max= 136.6 Min =-170.5 ave_density_ele ave_electric_potential medium Max=2.6x1016 medium Max= 136.8 Min =-170.2 large Max=7.0x1016 large Max= 138.5 Min =-171.5 * The weight is the number of molecul

  23. Slide 23: Time step dependence

    Time step dependence electron density [#/m3] electric potential [V] auto Max=2.6x1016 auto Max=137, Min=-170 ave_electric_potential ave_density_ele 1x10-10 Max=2.4x1016 1x10-10 Max=138, Min=-167 3x10-10 Max=2.3x1016 3x10-10 Max=147, Min=-149 Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved.

  24. Slide 24: Application example

    Application example Capacitively Coupled Plasma (CCP) Magnetron Sputtering Ion Flux Ion Density Electron Ion Flux Density Ion Beam Spectrometry & Acceleration Velocity profile Ion beam Density profile Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 24

  25. Slide 25: 1. Ion implant process

    1. Ion implant process Ion beam analysis Ion beam accelerate Ion beam Density profile Velocity profile Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 25

  26. Slide 26: 1. Ion implant process

    1. Ion implant process Mg+ (M=24, R=87 cm) B=830 G C+ (M=12, R=60 cm) Be+ (M=9, R=52 cm) M : molecular weight, R : radius of ion flight pass Radius of ion flight pass 60 cm mv 2mE R  Mg+, C+, Be+ (E=100 eV) qB qB The radius of ion flight pass is proportional to root of ion energy. The results of P

  27. Slide 27: 1. Ion implant process

    1. Ion implant process Be+ C+ Mg+ Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 2727

  28. Slide 28: 1. Ion implant process

    1. Ion implant process C+ : 100 eV C+ : 50 keV Electrode 0V -10kV -20kV -25kV -50kV Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 28

  29. Slide 29: 1. Ion implant process

    1. Ion implant process In this simulation, elastic collision is neglected so that sum of potential and kinetic energies is conserved completely. Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 29

  30. Slide 30: 2. Magnetron Sputter Circular target

    2. Magnetron Sputter Circular target Inlet (w=2) Inlet (w=2) Physical Parameters: Target (f40) Inlet condition Ar 10 sccm for each part Outlet condition 1.0 Pa Magnet Permanent magnet Ferrite 82 Magnetic Yoke Fe Target material Ta Target-Substrate 30 mm distance Plasma Applied voltage DC -500 V on t

  31. Slide 31: 2. Cut cell mesh

    2. Cut cell mesh Hybrid mesh for magnetron sputtering simulation with rotary target :  Rectangle cell in space domain  Cut cell is on curved surface Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 31

  32. Slide 32: 2. Results

    2. Results • Ar+ Ion Energy Flux (Plasma module) • Ta Number Density with Flow Vector (Neutral module) [W/m2] [/m3] • Ta Deposition Rate on Substrate [m/s] [m] Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 32

  33. Slide 33: 3. Magnetron Sputter negative ion

    3. Magnetron Sputter negative ion It is easy for halogen gas, for example oxygen and fluorine, to form negative ion because of the large electron affinity. The negative ion damages substrate in DC magnetron sputtering process. We simulate plasma including negative ions using Particle-PLUS. Substrate

  34. Slide 34: 3. Magnetron Sputter negative ion

    3. Magnetron Sputter negative ion  2D-axisymmetric model Substrate  Mixture of Ar and O2, total pressure 1 Pa 60 mm (0.5 Pa + 0.5 Pa) 20 mm  DC -250 [V] on target  2ndary electron emission coefficient 0.02 Target Magnet Magnet Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 34

  35. Slide 35: 3. Gas Reaction

    3. Gas Reaction Collision reaction data set for O2-Ar mixture consists of (a) pure O2 data, (b) pure Ar data, and (c) interactions of O2 (or products from O2) and Ar. The data set is shown in the following table.  Table a-1. Collision-reactions of pure O2 system No. Collision reaction Type Referenc

  36. Slide 36: 3. Gas Reaction

    3. Gas Reaction  Table a-2. Collision-reactions of pure O2 system No. Collision reaction Type Reference (11) O2+ + O2  O 2+ + O 2 Elastic (Djilali & Mohammed, 2014) (12) O2+ + O2  O2 + O2+ Charge Transfer (Langevin theory) (13) O + O 2  O + O 2 Elastic (Langevin theory) (14) O+ + O 2  O + O2+

  37. Slide 37: 3. Gas Reaction

    3. Gas Reaction  Table c. additional collision-reactions for O2-Ar mixture system No. Collision reaction Type Reference (1) O2+ + Ar  O2+ + Ar Elastic (Langevin theory) (2) O+ + Ar  O+ + Ar Elastic (Langevin theory) (3) O + Ar  O + Ar Elastic (Penent et al., 1987) (4) Ar+ + O2  Ar + O2+ Charg

  38. Slide 38: 3. Results

    3. Results • Electric potential • Electric potential with electric field vector [V] E ~ 79000 V/m (substrate side) The electric field in plasma is (target toward the target side. side) Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 3838

  39. Slide 39: 3. Negative ion flux

    3. Negative ion flux • Number flux of O ion Negative ions bump (substrate side) into substrate. (target side) [#/m2 s] Copyright © 2016 Wave Front Co., Ltd. All Rights Reserved. 39

  40. Slide 40: Summary

    Summary 1. DSMC-Neutrals / Particle-PLUS are useful for simulation of magnetron sputtering. User can obtain profiles of background gas, magnetic field, electron/ion density, flux, erosion, deposition and so on. 2. Particle-PLUS can simulates RF magnetron plasma considering self-bias effect. 3. Parti

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